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Your cart is empty. Maximum leakage source voltage (VDS): 60V
Maximum leakage source current (IDS): 30A
On resistance (RDS (on)): 0.135 Ω
Gate threshold voltage (VGS (th)): 2V
Working temperature range:- 55°C to 150°C
RFP30N06LE is suitable for inverters, converters, switching power supplies, electric vehicle chargers, and motor drives
The RFP30N06LE is equipped with ESD protection to withstand electrostatic discharge
It is also avalanche rated for stability at high voltages
This transistor can be used in a variety of applications from inverters and converters to electric vehicle chargers and motor drives
Package include:
12 x RFP30N06LE mosfet transistor
Andy
Reviewed in the United States on March 29, 2025
If you need some old MOSFET parts that may or may not be genuine and work reasonably well enough, these are probably for you.These will work for hobby projects just fine. You probably won't need a driver chip for these, but I would recommend not driving them directly from the microcontroller. Use a opto-isolator -- you wont' regret it.
MV
Reviewed in the United States on January 16, 2025
The 30n60 is a good general purpose FET for low voltage applications. I test every FET because there are many sold which are restamped lower grade parts . These meet the voltage specification by having a breakdown voltage of 70V and the on resistance was a very low 28 milliohms with a 1A test current, which is better than the published value of 46 milliohms. That means these will have lower heat loss. Gate voltage was found to be typically 2V. This is a good FET part that you should have confidence in with your projects.
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